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| J108 / J109 / J110 Discrete POWER & Signal Technologies J108 J109 J110 G SD TO-92 N-Channel Switch This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 58. Absolute Maximum Ratings* Symbol VDG VGS IGF TJ, Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TA = 25C unless otherwise noted Parameter Value 25 - 25 10 -55 to +150 Units V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max J108 / J109 / J110 350 2.8 125 357 Units mW mW/C C/W C/W (c)1997 Fairchild Semiconductor Corporation J108 / J109 / J110 J108 / J109 / J110 N-Channel Switch (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage I G = - 10 A, VDS = 0 VGS = - 15 V, VDS = 0 VGS = - 15 V, VDS = 0, TA = 100C VDS = 15 V, ID = 10 nA J108 J109 J110 - 25 - 3.0 - 200 - 10 - 6.0 - 4.0 V nA nA V V V - 3.0 - 2.0 - 0.5 ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, IGS = 0 VDS 0.1 V, VGS = 0 J108 J109 J110 J108 J109 J110 80 40 10 8.0 12 18 mA mA mA rDS(on) Drain-Source On Resistance SMALL SIGNAL CHARACTERISTICS Cdg(on) Csg(off) Cdg(off) Csg(off) Drain Gate & Source Gate On Capacitance Drain-Gate Off Capacitance Source-Gate Off Capacitance VDS = 0, VGS = 0, f = 1.0 MHz VDS = 0, VGS = - 10 V, f = 1.0 MHz VDS = 0, VGS = - 10 V, f = 1.0 MHz 85 15 15 pF pF pF *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Typical Characteristics Common Drain-Source ( ) Parameter Interactions 100 50 r DS - DRAIN "ON" RESISTANCE I DSS @ V DS = 5.0V, V GS = 0 PULSED r DS @ V DS = 100mV, V GS = 0 V GS(off) @ V DS = 5.0V, I D 100 I D - DRAIN CURRENT (mA) V GS = 0 V - 2.0 V 1,000 I DSS - 500 80 - 1.0 V - 3.0 V = 3.0 nA DRAIN CURRENT (mA) 60 40 20 - 5.0 V r DS 10 5 I DSS 100 50 - 4.0 V T A = 25C TYP V GS(off) = - 5.0 V 0 0 0.4 0.8 1.2 1.6 VDS - DRAIN-SOURCE VOLTAGE (V) 2 _ 0.1 VGS (OFF) 10 _ _ _ 0.5 1 5 10 - GATE CUTOFF VOLTAGE (V) _ J108 / J109 / J110 N-Channel Switch (continued) Typical Characteristics (continued) Common Drain-Source 100 C ts (C rs ) - CAPACITANCE (pF) - DRAIN CURRENT (mA) f = 0.1 - 1.0 MHz C iss (V DS = 5.0V) Common Drain-Source 50 TA = 25C TYP V GS(off) = - 0.7 V 40 30 10 C rss (VDS = 0 ) V GS = 0 V 20 10 0 - 0.1 V - 0.2 V - 0.3 V - 0.4 V - 0.5 V 0 -4 -8 -12 -16 V GS - GATE-SOURCE VOLTAGE (V) -20 I 0 D 1 2 3 4 VDS - DRAIN-SOURCE VOLTAGE (V) 5 r DS - NORMALIZED RESISTANCE 100 50 20 10 5 2 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off)- NORMALIZED GATE-SOURCE VOLTAGE (V) 1 V GS(off) @ 5.0V, 10 A e n - NOISE VOLTAGE (nV / Hz) Normalized Drain Resistance vs Bias Voltage Noise Voltage vs Frequency 100 50 V DG = 10V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.21 @ f 1.0 kHz r DS r DS = VGS 1 -________ V GS(off) 10 5 I D = 1.0 mA I D = 10 mA 1 0.01 0.03 0.1 0.5 1 2 10 f - FREQUENCY (kHz) 100 Switching Turn-On Time vs Gate-Source Cutoff Voltage 10 - TURN-ON TIME (ns) 8 6 4 I D = 10 mA VDD = 1.5V V GS(off) = - 12V I D = 30 mA Switching Turn-On Time vs Drain Current 50 TURN-OFF TIME (ns) 40 30 20 TA = 25C TA = 25C V GS(off) = - 8.5V V GS(off) = - 5.5V V GS(off) = - 3.5V OFF- ON 2 0 10 0 V DD = 1.5V V GS(off) = - 12V t 0 V GS(off) -2 -4 -6 -8 -10 - GATE-SOURCE CUTOFF VOLTAGE (V) t 0 5 10 15 20 I D - DRAIN CURRENT (mA) 25 J108 / J109 / J110 J108 / J109 / J110 N-Channel Switch (continued) Typical Characteristics (continued) On Resistance vs Drain Current r DS - DRAIN "ON" RESISTANCE ( ) 100 50 V GS(off) = - 3.0V 125C 125C V GS = 0 - OUTPUT CONDUCTANCE ( mhos) Output Conductance vs Drain Current 100 V DG = 5.0V 10V V GS(off) - 4.0V 5.0V 10V 15V 20V 15V 20V 10 5 25C 25C - 55C V GS(off) = - 5.0V 10 - 2.0V 5.0V 10V 15V 20V T A = 25C - 1.0V f = 1.0 kHz os 1 1 ID 10 - DRAIN CURRENT (mA) 100 1 0.1 ID 1 - DRAIN CURRENT (mA) 10 g fs - TRANSCONDUCTANCE (mmhos) Transconductance vs Drain Current T A = 25C V DG = 10V f = 1.0 kHz T A = - 55C T A = 25C T A = 125C g Power Dissipation vs Ambient Temperature PD - POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( oC) 125 150 100 TO-92 10 V GS(off) = - 1.0V V GS(off) = - 3.0V V GS(off) = - 5.0V 1 0.1 ID 1 - DRAIN CURRENT (mA) 10 |
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